Curriculum Vitae
Patrick D. Lomenzo
patricklomenzo(at)gmail.com
Education
Ph.D. in Electrical and Computer Engineering (May 3rd, 2016)
University of Florida, Gainesville, FL
Dissertation: Ferroelectric and Antiferroelectric Properties of HfO2-Based Thin Films
Advisor: Toshikazu Nishida
B.S. in Electrical Engineering (Dec. 18th, 2012)
University of Florida, Gainesville, FL
Graduated Cum Laude
Professional Experience
Principal Device Engineer (2024 – Present)
GlobalFoundries, Dresden, Germany
- Designing devices and device layouts on the 22FDX technology.
- Debugging standardized device cells within the Cadence design environment.
- Overseeing device splits and processes for technology development.
Research Scientist and Project Manager (2018 – 2024)
Nanoelectronic Materials Laboratory (NaMLab), Dresden, Germany
- Conducting research on ferroelectric, piezo- and pyroelectric materials and devices.
- Drafting of project reports and funding proposals.
- Supervising undergraduate and graduate students toward the fulfillment of a thesis.
- Managing research projects including finances and project goals.
Postdoctoral Research Scholar (Oct. 2017 – Oct. 2018)
The Pennsylvania State University, State College, PA
Engineering Science and Mechanics Department
- Conducted research on ferrite powders via sol-gel combustion.
- Managed laboratory safety and inventory.
Electronics Engineer (June 2016 – Oct. 2017)
Northrop Grumman, Baltimore, MD
Process Integration and Sensor Instrumentation Server Group
- Supported research and development of superconducting logic memory technologies.
- Performed surface characterization, wafer inspections, etch process development, and process flow improvements.
- Developed software GUIs and hardware interfaces to stimulate components of radar systems.
- Provided test sets for integration and testing of radar systems.
Process Integration Intern (May 2014 – Aug. 2014)
Texas Instruments, Dallas, TX
Analog Technology Development
- Performed high voltage stressing to characterize reliability of LDMOS devices.
- Characterized breakdown behaviors of several different types of integrated high voltage devices.
Research Experience
Research Scientist and Project Manager (Oct. 2018 – Aug. 2024)
Nanoelectronic Materials Laboratory (NaMLab), Dresden, Germany
- Managing two German Research Foundation (DFG) projects on (i) piezoelectric and pyroelectric ZrO2 devices (Zeppelin) and (ii) AlScN ferroelectrics (WUMM).
- Developing in-house pyroelectric characterization techniques.
- Creating programs and scripts to extract, process, and analyze data for remote control applications, device characterization, and group presentations.
- Modeling and simulating ferroelectric, pyroelectric, and piezoelectric device behavior.
- Publishing peer-reviewed scientific articles and letters.
- Presenting scientific work at prestigious international conferences.
Postdoctoral Research Scholar (2017 – 2018)
The Pennsylvania State University, State College, PA
Engineering Science and Mechanics Department
- Synthesized (Co, Ni, and Zn) ferrites and doped zirconia nanoparticles by sol-gel autocombustion.
- Developed software to provide quantitative chemical analysis on sol-gel compositions.
- Characterized magnetic oxides with vibrating sample magnetometry (VSM), thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), and x-ray diffraction (XRD) through Rietveld refinement.
- Managed the laboratory chemical inventory system and oversaw chemical safety and waste disposal.
- Responsible for acquiring laboratory equipment and supplies.
Predoctoral Research Assistant (2013 – 2016)
University of Florida, Gainesville, FL
Department of Electrical and Computer Engineering
- Fabricated ferroelectric HfO2 thin films using new methods and techniques.
- Electrically characterized ferroelectric and antiferroelectric HfO2 thin films for memory and energy storage applications.
- Employed materials characterization techniques, such as TEM, GI-XRD, and XPS, to assess thin film chemistry and structure.
- Investigated the effects of applied mechanical stress on lead zirconate titanate (PZT).
Undergraduate Research Assistant (2011 – 2012)
University of Florida, Gainesville, FL
Department of Mechanical and Aerospace Engineering
- Designed, fabricated, and characterized electrochemical double layer capacitors.
- Performed impedance spectroscopy to extract dielectric response of materials.
Research Interests
- Developing ferroelectric and antiferroelectric devices and materials for emerging memory technologies, pyroelectric and piezoelectric sensors, neuromorphic computing, energy storage and energy harvesting, MEMS, and integrated electronics.
- Enhancing solid-state semiconductor devices with innovative materials and approaches.
- Physical modeling and characterization of thin films, sensors, and neuromorphic devices.
- Development of SPICE models for novel ferroelectric and antiferroelectric circuits and applications.
- Exploiting concepts across disciplines to realize new functionalities and engineering methods.
Teaching Experience
Guest Lecturer (2021 – Present)
Technische Universität Dresden
Nanoelectronic Systems
Courses: Memory Technology I & II
- Delivering lectures and labs in a hybrid format with in-person attendance and video recordings.
- Creating new lecture material and revising previous lecture materials.
- Using E-learning tools to administer course content and communicate with students.
Publications and Patents
- Switchable nonvolatile pyroelectric device
P. D. Lomenzo, U. Schröder.
U.S. Patent Application 18/104,524, filed August 1, 2024.
- Ferroelectric Al0.85Sc0.15N and Hf0.5Zr0.5O2 Domain Switching Dynamics
R. Guido, X. Wang, B. Xu, R. Alcala, T. Mikolajick, U. Schroeder, and P. D. Lomenzo
ACS Applied Materials & Interfaces 16, no. 32 (2024): 42415-42425.
- Influence of Biaxial Strain and Interfacial Layer Growth on Ferroelectric Wake-Up and Phase Transition Fields in ZrO2
X. Bohan, R. Ganser, K. M. Holsgrove, X. Wang, P. Vishnumurthy, T. Mikolajick, U. Schroeder, A. Kersch, and P. D. Lomenzo
ACS Applied Materials & Interfaces (2024).
- Kinetics of N‐to M‐Polar Switching in Ferroelectric Al1− xScxN Capacitors
R. Guido, H. Lu, P. D. Lomenzo, T. Mikolajick, A. Gruverman, U. Schroeder
Advanced Science, 11(16), 2308797. (2024)
- Voltage Programmable Pyroelectric Sensors With ZrO₂-Based Antiferroelectrics
P. D. Lomenzo, S. Li, B. Xu, T. Mikolajick, U. Schroeder IEEE Sensors Journal, (2024)
- Strain as a Global Factor in Stabilizing the Ferroelectric Properties of ZrO2
B. Xu, P. D. Lomenzo, A. Kersch, T. Schenk, C. Richter, C. M. Fancher, S. Starschich, F. Berg, P. Reinig, K. M. Holsgrove, T. Kiguchi, T. Mikolajick, U. Boettger, U. Schroeder
Advanced Functional Materials, 2311825 (2023)
- Roadmap on ferroelectric hafnia- and zirconia-based materials and devices
J. P. B. Silva, R. Alcala, U. E. Avci, N. Barrett, L. Bégon-Lours, M. Borg, S. Byun, S. C. Chang, S. W. Cheong, D. H. Choe, J. Coignus, V. Deshpande, A. Dimoulas, C. Dubourdieu, I. Fina, H. Funakubo, L. Grenouillet, A. Gruverman, J. Heo, M. Hoffmann, H. A. Hsain, F. T. Huang, C. S. Hwang, J. Íñiguez, J.L. Jones, I. V. Karpov, A. Kersch, T. Kwon, S. Lancaster, M. Lederer, Y. Lee, P. D. Lomenzo, L. W. Martin, S. Martin, S. Migita, T. Mikolajick, B. Noheda, M. H. Park, K. M. Rabe, S. Salahuddin, F. Sánchez, K. Seidel, T. Shimizu, T. Shiraishi, S. Slesazeck, A. Toriumi, H. Uchida, B. Vilquin, X. Xu, K. H. Ye, U. Schroeder
APL Materials, 11(8), 089201. (2023)
- Role of Defects in the Breakdown Phenomenon of Al1–x Sc x N: From Ferroelectric to Filamentary Resistive Switching
R. Guido, T. Mikolajick, U. Schroeder, and P. D. Lomenzo
Nano Letters, 23(15), 7213-7220. (2023)
- Wake-up free ferroelectric hafnia-zirconia capacitors fabricated via vacuum-maintaining atomic layer deposition
H. A. Hsain, Y. Lee, P. D. Lomenzo, R. Alcala, B. Xu, T. Mikolajick, U. Schroeder, G. N. Parsons, and J. L. Jones
Journal of Applied Physics, 133(22). (2023)
- Discovery of Nanoscale Electric Field‐Induced Phase Transitions in ZrO2
P. D. Lomenzo, L. Collins, R. Ganser, B. Xu, R. Guido, A. Gruverman, A. Kersch, T. Mikolajick, and U. Schroeder
Advanced Functional Materials, 2303636. (2023)
- Influence of the Ozone Dose Time during Atomic Layer Deposition on the Ferroelectric and Pyroelectric Properties of 45 nm-Thick ZrO2 Films
B. Xu, L. Collins, K. M. Holsgrove, T. Mikolajick, U. Schroeder, and P. D. Lomenzo
ACS Applied Electronic Materials, 5(4), 2288-2295. (2023)
- Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al0.72Sc0.28N
R. Guido, P. D. Lomenzo, M. R. Islam, N. Wolff, M. Gremmel, G. Schönweger, H. Kohlstedt, L. Kienle, T. Mikolajick, S. Fichtner, and U. Schroeder
ACS Applied Materials & Interfaces, 15(5), 7030-7043. (2023)
- Editorial: Advanced characterization methods for HfO2/ZrO2-based ferroelectrics
P. D. Lomenzo, U. Celano, T. Kämpfe, and S. R. McMitchell
Frontiers in Nanotechnology, 5, 1114267. (2023)
- Reduced fatigue and leakage of ferroelectric TiN/Hf0. 5Zr0. 5O2/TiN capacitors by thin alumina interlayers at the top or bottom interface
H. A. Hsain, Y. Lee, S. Lancaster, P. D. Lomenzo, B. Xu, T. Mikolajick, U. Schroeder, G. N. Parsons, and J. L. Jones
Nanotechnology, 34(12), 125703. (2023)
- The Electrode‐Ferroelectric Interface as the Primary Constraint on Endurance and Retention in HZO‐Based Ferroelectric Capacitors
R. Alcala, M. Materano, P. D. Lomenzo, P. Vishnumurthy, W. Hamouda, C. Dubourdieu, A. Kersch, N. Barrett, T. Mikolajick, and U. Schroeder
Advanced Functional Materials, 2303261. (2023)
- Using Raman spectroscopy and x-ray diffraction for phase determination in ferroelectric mixed Hf1−xZrxO2-based layers
U. Schroeder, R. Sachdeva, P. D. Lomenzo, B. Xu, M. Materano, T. Mikolajick, and A. Kersch
Journal of Applied Physics, 132(21). (2022)
- The Role of Interface Dynamics on the Reliability Performance of BEOL Integrated Ferroelectric HfO2 Capacitors
R. Alcala, P. D. Lomenzo, T. Mittmann, B. Xu, R. Guido, S. Lancaster, P. Vishnumurthy, L. Grenouillet, S. Martin, J. Coignus, T. Mikolajick, and U. Schroeder
In 2022 International Electron Devices Meeting (IEDM) (pp. 32-8). IEEE. (2022)
- Temperature‐Dependent Phase Transitions in HfxZr1‐xO2 Mixed Oxides: Indications of a Proper Ferroelectric Material
U. Schroeder, T. Mittmann, M. Materano, P. D. Lomenzo, P. Edgington, Y. H. Lee, M. Alotaibi, A. R. West, T. Mikolajick, A. Kersch, and J. L. Jones
Advanced Electronic Materials, 2200265. (2022)
- Harnessing Phase Transitions in Antiferroelectric ZrO2 Using the Size Effect
P. D. Lomenzo, M. Materano, T. Mittmann, P. Buragohain, A. Gruverman, T. Kiguchi, T. Mikolajick, and U. Schroeder
Advanced Electronic Materials, 8(1), 2100556. (2022)
- Pyroelectric dependence of atomic layer-deposited Hf0.5Zr0.5O2 on film thickness and annealing temperature
P. D. Lomenzo, R. Alcala, C. Richter, S. Li, T. Mikolajick, and U. Schroeder
Applied Physics Letters, 119(11), 112903. (2021)
- Electronic Contributions to Ferroelectricity and Field-Induced Phase Transitions in Doped-HfO2
P. D. Lomenzo, U. Schroeder, and T. Mikolajick,
In 2021 IEEE International Symposium on Applications of Ferroelectrics (ISAF) (pp. 1-4). IEEE.
- Reliability aspects of ferroelectric hafnium oxide for application in non-volatile memories
H. Mulaosmanovic, P. D. Lomenzo, U. Schroeder, S. Slesazeck, T. Mikolajick, and B. Max, B.
In 2021 IEEE International Reliability Physics Symposium (IRPS) (pp. 1-6). IEEE.
- Next generation ferroelectric materials for semiconductor process integration and their applications
T. Mikolajick, S. Slesazeck, H. Mulaosmanovic, M. H. Park, S. Fichtner, P. D. Lomenzo, M. Hoffmann, and U. Schroeder
Journal of Applied Physics, 129(10), 100901. (2021)
- Interplay between oxygen defects and dopants: effect on structure and performance of HfO2-based ferroelectrics
M. Materano, P. D. Lomenzo, A. Kersch, M. H. Park, T. Mikolajick, and U. Schroeder
Inorganic Chemistry Frontiers, 8(10), 2650-2672. (2021)
- Polarization switching in thin doped HfO2 ferroelectric layers
M. Materano, P. D. Lomenzo, H. Mulaosmanovic, M. Hoffmann, A. Toriumi, T. Mikolajick, and U. Schroeder.
Applied Physics Letters 117, no. 26: 262904. (2020)
- Stabilizing the ferroelectric phase in HfO2-based films sputtered from ceramic targets under ambient oxygen
T. Mittmann, M. Michailow, P. D. Lomenzo, J. Gärtner, M. Falkowski, A. Kersch, T. Mikolajick, and U. Schroeder. Nanoscale (2020).
- Influence of Oxygen Content on the Structure and Reliability of Ferroelectric HfxZr1–xO2 Layers
M. Materano, T. Mittmann, P. D. Lomenzo, C. Zhou, J. L. Jones, M. Falkowski, A. Kersch, T. Mikolajick, and U. Schroeder.
ACS Applied Electronic Materials 2, no. 11: 3618-3626. (2020)
- Influence of oxygen source on the ferroelectric properties of ALD grown Hf1-xZrxO2 films
R. Alcala, C. Richter, M. Materano, P. D. Lomenzo, C. Zhou, J. L. Jones, T. Mikolajick, and U. Schroeder. Journal of Physics D: Applied Physics 54, no. 3: 035102. (2020)
- A Gibbs energy view of double hysteresis in ZrO2 and Si-doped HfO2
P. D. Lomenzo, M. Materano, C. Richter, R. Alcala, T. Mikolajick, and U. Schroeder
Applied Physics Letters 117, no. 14: 142904. (2020)
- AFE-like Hysteresis Loops from Doped HfO2: Field Induced Phase Changes and Depolarization Fields
P. D. Lomenzo, C. Richter, M. Materano, T. Mikolajick, U. Schroeder, T. Schenk, D. Spirito, and S. Gorfman.
In 2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF), pp. 1-4. IEEE.
- Hafnium oxide as an enabler for competitive ferroelectric devices
T. Mikolajick, H. Mulaosmanovic, P. D. Lomenzo, M. Hoffmann, S. Slesazeck, and U. Schroeder.
In 2020 IEEE Silicon Nanoelectronics Workshop (SNW), pp. 1-2. IEEE.
- Depolarization as Driving Force in Antiferroelectric Hafnia and Ferroelectric Wake-up
P. D. Lomenzo, C. Richter, T. Mikolajick, and U. Schroeder.
ACS Applied Electronic Materials (2020).
- Thickness Scaling of AFE-RAM ZrO2 Capacitors with High Cycling Endurance and Low Process Temperature
P. D. Lomenzo, S. Slesazeck, T, Mikolajick, and U. Schroeder.
2020 IEEE International Memory Workshop (IMW). IEEE, 2020.
- Universal Curie constant and pyroelectricity in doped ferroelectric HfO2 thin films
P. D. Lomenzo, S. Jachalke, H. Stoecker, E. Mehner, C. Richter, T. Mikolajick, and U. Schroeder.
Nano Energy: 104733. (2020)
- Review of Defect Chemistry in Fluorite-structure Ferroelectrics for future electronic devices
M. H. Park, D. H. Lee, K. Yang, J. Y. Park, G. T, Yu, H. W. Park, M. Materano, T. Mittmann, P. D. Lomenzo, T. Mikolajick, and U. Schroeder.
Journal of Materials Chemistry C (2020).
- Material perspectives of HfO2-based ferroelectric films for device applications
A. Toriumi, L. Xu, Y. Mori, X. Tian, P. D. Lomenzo, H. Mulaosmanovic, M. Materano, T. Mikolajick, and U. Schroeder.
2019 IEEE International Electron Devices Meeting (IEDM) (pp. 15-1). IEEE.
- Next Generation Ferroelectric Memories enabled by Hafnium Oxide
T. Mikolajick, U. Schroeder, P. D. Lomenzo, E. T. Breyer, H. Mulaosmanovic, M. Hoffmann, T. Mittmann, F. Mehmood, B. Max, and S. Slesazeck.
2019 IEEE International Electron Devices Meeting (IEDM) (pp. 15-5). IEEE.
- Bulk Depolarization Fields as a Major Contributor to the Ferroelectric Reliability Performance in Lanthanum Doped Hf0.5Zr0.5O2 Capacitors
F. Mehmood, M. Hoffmann, P. D. Lomenzo, C. Richter, M. Materano, T. Mikolajick, and U. Schroeder.
Advanced Materials Interfaces 6.21: 1901180. (2019)
- Ferroelectric Hf1-xZrxO2 memories: device reliability and depolarization fields
P. D. Lomenzo, S. Slesazeck, M. Hoffmann, B. Max, T. Mikolajick, and U. Schroeder.
2019 19th Non-Volatile Memory Technology Symposium (NVMTS), Durham, NC, USA, 2019, pp. 1-8.
- Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium
U. Schroeder, M. Materano, T. Mittmann, P. D. Lomenzo, T. Mikolajick, and A. Toriumi.
Japanese Journal of Applied Physics 58.SL: SL0801. (2019)
- Fluid Imprint and Inertial Switching in Ferroelectric La:HfO2 Capacitors
P. Buragohain, A. Erickson, P. Kariuki, T. Mittmann, C. Richter, P. D. Lomenzo, H. Lu, T. Schenk, T. Mikolajick, U. Schroeder, and A. Gruverman. ACS Applied Materials & Interfaces (2019) 11 (38), 35115-35121.
- Origin of Ferroelectric Phase in Undoped HfO2 Films by Sputtering
T. Mittmann, M. Materano, P. D. Lomenzo, M. H. Park, I. Stolichnov, M. Cavalieri, C. Zhou, C.-C. Chung, J. L. Jones, T. Szyjka, M. Müller, A. Kersch, T. Mikolajick, and U. Schroeder.
Advanced Materials Interfaces, 6, 1900042. (2019)
- Doped ferroelectric hafnium oxide film devices
Nishida, Toshikazu, Mohammad Takmeel, Saeed Moghaddam, and Patrick Lomenzo.
U.S. Patent Application 15/286,946, Granted Dec. 2018.
- Doped Hf0.5Zr0.5O2 for High Efficiency Integrated Supercapacitors
P. D. Lomenzo, C-C. Chung, C. Zhou, J.L. Jones, and T. Nishida.
Applied Physics Letters 110: 232904 (2017)
- Annealing behavior of ferroelectric Si-doped HfO2 thin films
P. D. Lomenzo, Q. Takmeel, S. Moghaddam, and T. Nishida.
Thin Solid Films 615: 139-144. (2016)
- Mixed Al and Si doping in ferroelectric HfO2 thin films
P. D. Lomenzo, Q. Takmeel, C. Zhou, C-C. Chung, S. Moghaddam, J.L. Jones, and T. Nishida.
Applied Physics Letters 107.24: 242903. (2015)
- Ferroelectric Si-Doped HfO 2 Device Properties on Highly Doped Germanium
P. D. Lomenzo, Q. Takmeel, C.M. Fancher, C. Zhou, N.G. Rudawski, S. Moghaddam, J.L. Jones, and T. Nishida.
IEEE Electron Device Letters 36.8: 766-768. (2015)
- TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
P. D. Lomenzo, Q. Takmeel, C. Zhou, C.M. Fancher, E. Lambers, N.G. Rudawski, J.L. Jones, S. Moghaddam, and T. Nishida.
Journal of Applied Physics 117.13: 134105. (2015)
- The effects of layering in ferroelectric Si-doped HfO2 thin films
P. D. Lomenzo, Q. Takmeel, C. Zhou, Y. Liu, C.M. Fancher, J.L. Jones, S. Moghaddam, and T. Nishida.
Applied Physics Letters 105.7: 072906. (2014)
- Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
P. D. Lomenzo, P. Zhao, Q. Takmeel, S. Moghaddam, T. Nishida, M. Nelson, C.M. Fancher, E.D. Grimley, X. Sang, J.M. LeBeau, and J.L Jones.
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics, 32.3: 03D123. (2014)
Conference Presentations
Transducers 2023 (June 25th – 29th, 2023)
Kyoto, Japan
Oral Presentation
Demonstration of a Non-volatile Antiferroelectric Pyroelectric Switch
P. D. Lomenzo, S. Li, T. Mikolajick, U. Schroeder
242nd Electrochemical Society (ECS) Meeting 2022 (Oct. 9th – 13th, 2022)
Atlanta, Georgia, USA
Invited Oral Presentation
Advances in Atomic Layer Processing of Hafnia-Zirconia Ferroelectrics
P. D. Lomenzo, R. Alcala, M. Materano, C. Richter, T. Mikolajick, U. Schroeder
High-k Workshop 2022 (Sept. 12th – 13th, 2022)
Dresden, Germany
Oral Presentation
Characterizing the Influence of Lightly Doping Antiferroelectric ZrO2 with Hf
P. D. Lomenzo, S. Li, T. Mikolajick, U. Schroeder
European Materials Research Society (E-MRS) Meeting, Spring 2022 (May 30th – June 3rd, 2023)
Virtual Conference
Oral-video Presentation
Major Energy Storage Enhancement in Workfunction Engineered ZrO2 Supercapacitors
P. D. Lomenzo, T. Mikolajick, U. Schroeder
240th Electrochemical Society (ECS) Meeting (Oct. 10th – Oct. 14th)
Virtual Conference
Invited Video-Oral Presentation
Ferroelectric Hafnium Oxide for Non-Volatile Memory Applications: From Single Capacitors to Memory Arrays
P. D. Lomenzo, T. Mikolajick, U. Schroeder
IEEE International Symposium on Applications of Ferroelectrics (ISAF) 2021 (May 16th – 21st, 2021)
Virtual Conference
Video-Oral Presentation and Paper
Electronic Contributions to Ferroelectricity and Field-Induced Phase Transitions in Doped-HfO2
P. D. Lomenzo, T. Mikolajick, U. Schroeder
International Memory Workshop (IMW) 2020 (May 17th – 25th, 2020)
Virtual Conference
Video-Oral Presentation and Paper
Thickness Scaling of AFE-RAM ZrO2 Capacitors with High Cycling Endurance and Low Process Temperature
P. D. Lomenzo, S. Slesazeck, T. Mikolajick, U. Schroeder
Oxide Materials and Devices Workshop 2020 (January 14th – 15th, 2020)
Xi’an Jiaotang University, Xi’an, China
Oral Presentation
Overview of Material Properties for Ferroelectric HfO2-based Devices
P. D. Lomenzo
Non-Volatile Memory Technology Symposium 2019 (NVMTS 2019)
Durham, North Carolina, USA
Oral Presentation and Paper
Ferroelectric Hf1-xZrxO2 Memories: Device Reliability and Depolarization Fields
P. D. Lomenzo, S. Slesazeck, M. Hoffmann, U. Schroeder, B. Max, T. Mikolajick
EM-NANO 2019
Shinshu University, Nagano, Japan
Oral Presentation
Unleashing Ferroelectricity in Hafnium and Zirconium Oxides for Next Generation Ferroelectric Devices
P. D. Lomenzo
SRC TECHCON 2015
Austin, TX, USA
Oral Presentation, Paper, and Poster
Origins of Asymmetry in Ferroelectric Si-HfO2 Thin Films with TaN Electrode
P. D. Lomenzo, Q. Takmeel, S. Moghaddam, T. Nishida
SRC TECHCON 2014
Austin, TX, USA
Oral Presentation, Paper, and Poster
Process Dependence of CMOS Compatible Si-doped HfO2 Thin Films
P. D. Lomenzo, Q. Takmeel, S. Moghaddam, T. Nishida
SRC TECHCON 2013
Austin, TX, USA
Poster
Characterization and Modeling of Temperature and Electric Bias Effects on FRAM Enhancement
P. D. Lomenzo, T. Acosta, J. Rodriguez, T. Nishida
Skills
- Exceptional technical writing abilities.
- Excellent verbal communication and oral presentation skills.
- Expertise in electrical characterization and analysis of semiconductor and dielectric devices.
- Experience managing projects and supervising project teams.
- Well-versed in a variety of cleanroom semiconductor fabrication equipment.
- Detailed experience with thin film material characterization including:
- Atomic force microscopy (AFM)
- Ellipsometry
- Profilometry
- X-ray photoelectron spectroscopy (XPS)
- Piezoresponse force microscopy (PFM)
- X-ray diffraction (XRD).
- Software Proficiency: AutoCAD, C, C++, Cadence, IBM Cloud, LabVIEW, MATLAB, Microsoft Office, ngspice, Python, SolidWorks, Watson Assistant.
- Highly proficient in designing custom-built instrumentation for laboratory experiments.
- Years of experience supervising and mentoring students from diverse backgrounds.
Outreach Activities
- Mentored high school and undergraduate students for a career in science and technology related fields.
- Developed ALD recipes and deposition capabilities for the University of Florida’s Nanoscale Research Facility community.
- Participated as a mentor in the Pennsylvania State University’s Research for Undergraduates program.
- Mentored a team of senior undergraduate students in Pennsylvania State University’s Learning Factory Program to design a fixture for high temperature annealing under magnetic fields up to 6 Tesla.
- Presented a poster on the fundamentals of electricity at an ‘Ask a Scientist’ booth for Earth day at the Pennsylvania State University.
Awards, Service, and Memberships
- IEEE Ferroelectrics Young Investigator Award
- Peer-reviewed over 85 scientific articles and letters.
- Editor of special topic in Frontiers in Nanotechnology.
- Scientific committee member and session chair of E-MRS Fall 2020.
- 2016 University of Florida Technology Innovator Award.
- Recipient of Texas Instruments – Semiconductor Research Corporation (TI-SRC) Fellowship for Ph.D.
- Member of Tau Beta Pi (Engineering Honor Society)
- Member of Eta Kappa Nu (IEEE Honor Society for electrical engineers)
- Senior Member of IEEE
- Member of the Electrochemical Society (ECS)